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| SP6T PIN Diode Switch with Integrated Bias Network V 1.00 MA4SW610B-1 Features n n n MA4SW510B-1 Layout Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz. Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved. Nominal Chip Dimensions Chip Dimensions (m) X 3370 Pad Dimensions (m) X 400 125 Y 3120 Y 125 125 Chip Absolute Maximum Ratings1 @ TA = +25 C (unless otherwise specified) Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) Bias Current (Forward) Applied Voltage (Reverse) Value -65 C to +125 C -65 C to +150 C + 30 dBm +/- 40 mA 15 V RF DC 1. Exceeding any of these values may result in permanent damage J1 J2 B2 J3 B3 J4 B4 J5 B5 J6 B6 J7 B7 Pad Locations (m) X Y 0 0 -1535 +300 -1535 +1000 -1535 +1800 -1535 +2500 -750 +2820 -50 +2820 +750 +2820 +1450 +2820 +1535 +1800 +1535 +1100 +1535 +300 +900 0 Pad Locations Relative to J1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 V 1.00 Electrical Specifications @ TA = 25 C, +/- 10 mA Bias Current (On-Wafer Measurements) Parameters Insertion Loss Frequency 6 GHz 12 GHz 18 GHz Minimum 43 35 30 - Typical 1.0 1.3 1.9 49 43 39 18 20 16 19 22 20 80 Maximum 1.4 2.0 2.9 - Units dB dB dB dB dB dB dB dB dB dB dB dB nS Isolation 6 GHz 12 GHz 18 GHz Input Return Loss 6 GHz 12 GHz 18 GHz Output Return Loss 6 GHz 12 GHz 18 GHz Switching Speed1 10 GHz 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 80 ns rise and fall times. Typical Driver Connections Control Level (DC Current) B2 -10 mA +10 mA +10 mA +10 mA +10 mA +10 mA Condition of RF Output B7 +10 mA +10 mA +10 mA +10 mA +10 mA -10 mA B3 +10 mA -10 mA +10 mA +10 mA +10 mA +10 mA B4 +10 mA +10 mA -10 mA +10 mA +10 mA +10 mA B5 +10 mA +10 mA +10 mA -10 mA +10 mA +10 mA B6 +10 mA +10 mA +10 mA +10 mA -10 mA +10 mA J2-J1 Low Loss Isolation Isolation Isolation Isolation Isolation J3-J1 Isolation Low Loss Isolation Isolation Isolation Isolation J4-J1 Isolation Isolation Low Loss Isolation Isolation Isolation J5-J1 Isolation Isolation Isolation Low Loss Isolation Isolation J6-J1 Isolation Isolation Isolation Isolation Low Loss Isolation J7-J1 Isolation Isolation Isolation Isolation Isolation Low Loss Note: Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by a TTL compatible driver. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP6T PIN Diode Switch with Integrated Bias Network Microwave Performance MA4SW610B-1 V 1.00 TYPICAL INSERTION LOSS 0.00 -1.00 IL ( dB ) -2.00 -3.00 -4.00 -5.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 J7 TYPICAL ISOLATION 0.00 -10.00 -20.00 ISO ( dB ) -30.00 -40.00 -50.00 -60.00 -70.00 -80.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 J7 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP6T PIN Diode Switch with Integrated Bias Network Microwave Performance MA4SW610B-1 V 1.00 TYPICAL INPUT RETURN LOSS 0.00 -5.00 IRL ( dB ) -10.00 -15.00 -20.00 -25.00 -30.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 J7 TYPICAL OUTPUT RETURN LOSS 0.00 -5.00 ORL ( dB ) -10.00 -15.00 -20.00 -25.00 -30.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 FREQUENCY ( GHz ) J2 J3 J4 J5 J6 J7 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP6T PIN Diode Switch with Integrated Bias Network Assembly Considerations The following precautions should be observed for successful assembly of the die. MA4SW610B-1 V 1.00 Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255 oC and a tool tip temperature of 265 oC. When hot gas is applied, the tool tip temperature should be 290 oC. The chip should not be exposed to temperatures greater than 320 oC for more than 10 seconds. No more than three seconds should be required for the attachment. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Epoxy Die Attachment Electro-Static Sensitivity The MA4SW Series PIN switches are ESD, Class 1 sensitive. The proper ESD handling procedures should be used. Assembly should be preheated to 125-150 oC. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's recommended schedule. Wire Bonding Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A stage temperature of 150 oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible to minimize inductance. Mounting These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or Sn62/Pb36/Ag2 solder preform or electrically conductive Ag epoxy. Mounting surface must be clean of oils and contaminants and flat. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 SP6T PIN Diode Switch with Integrated Bias Network Operation of the MA4SW610B-1 Switch MA4SW610B-1 V 1.00 The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Ports as shown in the schematic provides successful RF operation of the MA4SW Series of PIN Diode Switches. The Backside Area of the Die is the RF and DC Return Ground Plane. The DC Bias Return is located on Common Port J1. Constant Current Sources should supply the DC Control Currents. In the Low Loss State, the Series Diode must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased while the Series Diode is Reverse Biased. This Design Improves Insertion Loss, P1dB, IP3, and Switching Speed by Incorporating a Voltage Pull-up Resistor ( ~ 100 ) in the DC Return Path, ( J1 ) under Insertion Loss Bias. A Typical Value of | -3 V | is achieved at the Insertion Loss Bias Node using +/- 20 mA, with a Standard , +/- 5 V TTL Controlled PIN Diode Driver. Fig 1: MA4SW610B-1 Schematic J1 ( Common Port ) DC Bias J7 J2 J6 J5 J4 J3 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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